Researchers are a step closer to realizing a new kind of memory that works according to the principles of spintronics which is analogous to, but different from, electronics. Their unique gallium arsenide-based ferromagnetic semiconductor can act as memory by quickly switching its magnetic state in the presence of an induced current at low power. Previously, such current-induced magnetization switching was unstable and drew a lot of power, but this new material both suppresses the instability and lowers the power consumption too.
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