Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.
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